Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=9/a=095503/pdf
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1. Growth of semipolar $(1\bar{1}01)$ high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)
2. Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate
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