Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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3. Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: growth of AlInN on AlN and effects of prior coating;Choi;J. Cryst. Growth,2014
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2. Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate;Materials Letters;2020-10
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