Lattice-matched AlInN in the initial stage of growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4872226
Reference22 articles.
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3. J. F. Carlin, J. Dorsaz, C. Zellweger, S. Gradecak, and M. Ilegems, in 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings, 2003, p. 36.
4. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
5. Current transport through AlInN/GaN multilayers used as n-type cladding layers in edge emitting laser diodes
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