Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN;Journal of Alloys and Compounds;2024-01
2. Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate;Materials Letters;2023-11
3. Comparative study of unintentionally doped and Si-doped multi-channel AlGaN/GaN heterostructures;Materials Letters;2023-09
4. Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content;International Journal of Modern Physics C;2022-06-08
5. Periodic behavior of reflectance and transmittance from a thin film due to optical interference; The case of AlN nanostructure films;Surfaces and Interfaces;2022-06
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