High-quality GaN grown by reactive sputtering
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
2. Low Temperature Growth of Gallium Nitride
3. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
4. The growth of highly resistive gallium nitride films
5. Reactive sputtering of gallium nitride thin films for GaAs MIS structures
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1. Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition;Applied Physics Letters;2024-03-04
2. Studies on High Quality Gan/Aln Deposited on Glass Substrates by Radio-Frequency Reactive Sputtering;2024
3. Influence of nitrogen gas flow ratio on gallium nitride film growth using high-density convergent plasma sputtering device at room temperature;Journal of Vacuum Science & Technology A;2021-01
4. Investigation of nitridation time on the quality of AlGaN/GaN heterojunction grown on AlN-sputtered sapphire substrate;Materials Letters;2020-10
5. Mn3GaC inverse perovskite thin films by magnetron sputtering from elemental targets;Materials Research Express;2020-10-01
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