Low Temperature Growth of Gallium Nitride-Reference-Cited by-同舟云学术

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Low Temperature Growth of Gallium Nitride

Published:1981-07 Issue:7 Volume:20 Page:L545-L548
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gotoh Hideki,Suga Toru,Suzuki Hideo,Kimata Morihiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus;Inorganic Chemistry;2023-03-16

2. AlGaN Epitaxial Technology;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

3. Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability;Japanese Journal of Applied Physics;2014-09-03

4. (Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications;ECS Transactions;2014-03-20

5. III-Nitride Materials and Devices for Power Electronics;ECS Transactions;2013-08-31

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