Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating-Reference-Cited by-同舟云学术

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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Published:2014-02 Issue: Volume:388 Page:137-142
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Choi Suk,Jin Kim Hee,Lochner Zachary,Kim Jeomoh,Dupuis Russell D.,Fischer Alec M.,Juday Reid,Huang Yu,Li Ti,Huang Jingyi Y.,Ponce Fernando A.,Ryou Jae-Hyun

Funder

DARPA/CMO NeXt Program

HRL Subcontract

US Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering

2. First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties

3. Statistical model of ternary group-III nitrides

4. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

5. Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications

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1. Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes;physica status solidi (a);2023-04-14

2. H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq;Journal of Crystal Growth;2022-06

3. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05

4. A MOVPE method for improving InGaN growth quality by pre-introducing TMIn*;Chinese Physics B;2021-01-01

5. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

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