First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.075213/fulltext
Reference41 articles.
1. Preparation and optical properties of Ga1−xInxN thin films
2. Properties of Ga1-xInxN Films Prepared by MOVPE
3. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
4. Large band gap bowing of InxGa1−xN alloys
5. Optical band gap dependence on composition and thickness of InxGa1−xN (0
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