Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106086
Reference3 articles.
1. Properties of Ga1-xInxN Films Prepared by MOVPE
2. Fundamental absorption edge in GaN, InN and their alloys
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