The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells-Reference-Cited by-同舟云学术

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The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells

Published:2022-11 Issue: Volume:21 Page:2228-2237
ISSN:2238-7854
Container-title:Journal of Materials Research and Technology
language:en
Short-container-title:Journal of Materials Research and Technology

Author:

Ben Yuhao^ORCID,Liang Feng^ORCID,Zhao Degang,Yang Jing,Chen Ping,Liu Zongshun

Publisher

Elsevier BV

Subject

Environmental Engineering

Reference28 articles.

1. High-efficiency blue and green laser diodes for laser displays;Nakatsu;Gallium Nitride Materials and Devices XIV, SPIE,2019

2. Blue and green InGaN semiconductor lasers as light sources for displays;Nakatsu;Gallium Nitride Materials and Devices XV SPIE,2020

3. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature;Feng;J Semiconduct,2021

4. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode;Yang;J Semiconduct,2022

5. When group-III nitrides go infrared: new properties and perspectives;Wu;J Appl Phys,2009

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1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12

2. Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates;Semiconductor Science and Technology;2024-06-24

3. Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties;Journal of Alloys and Compounds;2024-05

4. Response of InGaN/GaN multiple quantum well structure to UV-C and vacuum UV optical excitation;Journal of Luminescence;2024-05

5. Red Emission of Well‐Ordered InGaN/GaN Nanocolumn Arrays on Si (111) Substrates Grown via Nanotemplate Selective‐Area Growth;physica status solidi (b);2024-04-25

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