1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=5S/a=05FK06/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity;IEEE Electron Device Letters;2023-05
2. High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V;physica status solidi (RRL) – Rapid Research Letters;2021-02-17
3. Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias;Journal of Electronic Materials;2021-01-03
4. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths;ECS Journal of Solid State Science and Technology;2019
5. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy;Nanomaterials;2018-09-10
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