High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V-Reference-Cited by-同舟云学术

High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

Published:2021-02-17 Issue:6 Volume:15 Page:2000576
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Xue Hao¹,Hussain Kamal²,Talesara Vishank¹,Razzak Towhidur¹,Gaevski Mikhail²,Mollah Shahab²,Rajan Siddharth¹,Khan Asif²,Lu Wu¹^ORCID

Affiliation:

1. The Electrical and Computer Engineering Department The Ohio State University Columbus OH 43210 USA

2. The Electrical Engineering Department University of South Carolina Columbia SC 29208 USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000576

Reference36 articles.

1. An assessment of wide bandgap semiconductors for power devices

2. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

3. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

4. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

5. An AlN/Al0.85Ga0.15N high electron mobility transistor

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone;Microelectronics Journal;2024-05

2. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

3. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review;Crystals;2022-11-07

4. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors;Progress in Quantum Electronics;2022-05

5. Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders;Applied Physics Letters;2021-09-27