High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
Author:
Affiliation:
1. The Electrical and Computer Engineering Department The Ohio State University Columbus OH 43210 USA
2. The Electrical Engineering Department University of South Carolina Columbia SC 29208 USA
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000576
Reference36 articles.
1. An assessment of wide bandgap semiconductors for power devices
2. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
3. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
4. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
5. An AlN/Al0.85Ga0.15N high electron mobility transistor
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1. Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review;Crystals;2022-11-07
2. Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors;Progress in Quantum Electronics;2022-05
3. Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders;Applied Physics Letters;2021-09-27
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