High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
2. Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors
3. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
4. AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
5. AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)
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3. CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V;Applied Physics Express;2020-01-10
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5. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation;Applied Physics Letters;2016-01-04
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