AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation-Reference-Cited by-同舟云学术

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Published:2016-01-04 Issue:1 Volume:108 Page:013507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Shichuang¹²,Fu Kai²,Yu Guohao²,Zhang Zhili²,Song Liang²,Deng Xuguang²,Qi Zhiqiang¹,Li Shuiming²,Sun Qian²,Cai Yong²,Dai Jiangnan¹,Chen Changqing¹,Zhang Baoshun²

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People's Republic of China

Funder

Jiangsu Science and Tecnology Support Program

Key Technologies Support Program of Jiangsu Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939508

Reference30 articles.

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3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. 30-W/mm GaN HEMTs by Field Plate Optimization

5. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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