Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-27357-6.pdf
Reference50 articles.
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2. Ma, J. & Matioli, E. Slanted tri-gates for high-voltage GaN power devices. IEEE Electron Device Lett. 38, 1305–1308, https://doi.org/10.1109/LED.2017.2731799 (2017).
3. Tang, G. et al. Digital integrated circuits on an E-mode GaN power HEMT platform. IEEE Electron Device Lett. 38, 1282–1285, https://doi.org/10.1109/LED.2017.2725908 (2017).
4. Blaho, M. et al. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Appl. Phys. Lett. 111, 033506, https://doi.org/10.1063/1.4995235 (2017).
5. Zhang, K. et al. High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications. IEEE Electron Device Lett. 38, 615–618, https://doi.org/10.1109/LED.2017.2687440 (2017).
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1. Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors;Journal of Applied Physics;2023-10-24
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