Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
77 articles.
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1. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01
2. Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Half-FinFET Based on Double-Channel AlGaN/GaN Heterostructure;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity;Applied Physics Letters;2023-11-13
5. AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity;IEEE Transactions on Electron Devices;2023-11