AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=2/a=021103/pdf
Reference16 articles.
1. Application of GaN-based heterojunction FETs for advanced wireless communication
2. Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures
3. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
4. Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers
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