Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors-Reference-Cited by-同舟云学术

Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors

Published:2022-07 Issue: Volume:281 Page:115716
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Manikanthababu N.^ORCID,Tak B.R.^ORCID,Prajna K.,Sarkar S.,Meena R.C.,Asokan K.,Barman S.R.,Singh R.,Panigrahi B.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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