CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V-Reference-Cited by-同舟云学术

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CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V

Published:2020-01-10 Issue:2 Volume:13 Page:026503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Xie Hanlin^ORCID,Liu Zhihong,Gao Yu,Ranjan Kumud^ORCID,Lee Kenneth E.,Ng Geok Ing

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.7567/1882-0786/ab659f/pdf

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates;Inorganics;2024-07-30

2. A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers;Micromachines;2024-07-25

3. Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si;Applied Physics Letters;2024-07-08

4. High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz;Science China Information Sciences;2024-05-23

5. Characteristics study of heterojunction III-nitride/β-Ga₂O₃ nano-HEMT for THz applications;Engineering Research Express;2024-04-24

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