High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11432-024-3998-2.pdf
Reference7 articles.
1. Xie H, Liu Z, Gao Y, et al. Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency fT of 310 GHz. Appl Phys Express, 2019, 12: 126506
2. Li L, Nomoto K, Pan M, et al. GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz. IEEE Electron Dev Lett, 2020, 41: 689–692
3. Du H, Liu Z, Hao L, et al. Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure. Appl Phys Lett, 2022, 121: 172102
4. Du H, Liu Z, Hao L, et al. High-performance AlN/GaN MISHEMTs on Si with in-situ SiN enhanced ohmic contacts for mobile mm-Wave front-end applications. IEEE Electron Dev Lett, 2023, 44: 911–914
5. Xie H, Liu Z, Gao Y, et al. CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V. Appl Phys Express, 2020, 13: 026503
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