AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference19 articles.
1. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers
2. High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
3. Development of native, single crystal AlN substrates for device applications
4. Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates
5. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
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3. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Thin Solid Films;2020-08
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