High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate
Author:
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ac0f15/pdf
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