Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-kFilms-Reference-Cited by-同舟云学术

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Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-kFilms

Published:2011-04-20 Issue:4 Volume:50 Page:04DB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kume Ippei,Ueki Makoto,Inoue Naoya,Kawahara Jun,Ikarashi Nobuyuki,Furutake Naoya,Saitoh Shinobu,Hayashi Yoshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process withIn situEnd-Point-Detection Technique

2. Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low-kSiOCH Films with Various Hydrocarbon Content

3. Comprehensive Chemistry Designs in Porous SiOCH Film Stacks and Plasma Etching Gases for Damageless Cu Interconnects in Advanced ULSI Devices

4. Undulation of sub-100nm porous dielectric structures: A mechanical analysis

5. Mechanistic study of plasma damage of low k dielectric surfaces

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects;Plasma Processes and Polymers;2019-06-27

2. Broadband UV-assisted thermal annealing of low-k silicon carbonitride films using a C-rich silazane precursor;Journal of Vacuum Science & Technology B;2018-11

3. Effect of Porogen Incorporation on Pore Morphology of Low-k SiCxNyFilms Prepared Using PECVD;ECS Journal of Solid State Science and Technology;2014-10-02

4. Plasma processing of low-k dielectrics;Journal of Applied Physics;2013-01-28

5. Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-$k$/Cu Back End on the Line Layers;Japanese Journal of Applied Physics;2012-02-20

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