Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process withIn situEnd-Point-Detection Technique-Reference-Cited by-同舟云学术

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Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process withIn situEnd-Point-Detection Technique

Published:2009-04-20 Issue:4 Volume:48 Page:04C029
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ueki Makoto,Onodera Takahiro,Ishikawa Akira,Hoshino Susumu,Hayashi Yoshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics;Nanofluid Flow in Porous Media;2020-08-19

2. Copper Metal for Semiconductor Interconnects;Noble and Precious Metals - Properties, Nanoscale Effects and Applications;2018-07-04

3. Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing;Japanese Journal of Applied Physics;2011-05-20

4. Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning;Japanese Journal of Applied Physics;2011-05-20

5. Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing;Japanese Journal of Applied Physics;2011-05-01

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