Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

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Development of Original End Point Detection System Utilizing Eddy Current Variation Due to Skin Effect in Chemical Mechanical Polishing

Published:2011-05-01 Issue:5S1 Volume:50 Page:05EC09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujita Takashi,Kitade Keita,Yokoyama Toshiyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Defectless Monolithic Low-k/Cu Interconnects Produced by Chemically Controlled Chemical Mechanical Polishing Process withIn situEnd-Point-Detection Technique

2. Effect of temperature on copper damascene chemical mechanical polishing process

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Signal processing and analysis for copper layer thickness measurement within a large variation range in the CMP process;Review of Scientific Instruments;2017-11

2. Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization;Micromachines;2017-06-05

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