Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning-Reference-Cited by-同舟云学术

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Study of Cu-Inhibitor State for Post-Chemical Mechanical Polishing Cleaning

Published:2011-05-20 Issue:5 Volume:50 Page:05EC06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Harada Ken,Ito Atsushi,Kawase Yasuhiro,Suzuki Toshiyuki,Hara Makoto,Sakae Rina,Kimura Chiharu,Aoki Hidemitsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Lithography development and research challenges for the ≤22nm half-pitch

2. Next Generation Intel¯ Core™ Micro-Architecture (Nehalem) Clocking

3. Investigations on the corrosion of copper patterns in the course of the “post-CMP cleaning” of integrated electronic microcircuits in oxalic acid aqueous solutions

4. Influence of CMP Slurries and Post-CMP Cleaning Solutions on Cu Interconnects and TDDB Reliability

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemical Impedance Spectroscopy (EIS) Analysis of BTA Removal by TMAH during Post Cu CMP Cleaning Process;Journal of The Electrochemical Society;2012

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