Water-Related Hole Traps at Thermally Grown GeO$_{2}$–Ge Interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
2. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2
3. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
4. Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
5. Evaluation of GeO desorption behavior in the metal/GeO2/Ge structure and its improvement of the electrical characteristics
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1. Ge-friendly gate stacks: Initial property and long-term reliability;Micro and Nanostructures;2024-11
2. Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage;Materials Science in Semiconductor Processing;2024-08
3. (Invited) Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy;ECS Transactions;2017-08-15
4. The Impact of an Ultrathin Y2O3Layer on GeO2Passivation in Ge MOS Gate Stacks;IEEE Transactions on Electron Devices;2017-08
5. Water-Adsorbed Ultrathin GeO2/Ge and SiO2/Si Structure Studied In Situ by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy;Hyomen Kagaku;2017
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