Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics-Reference-Cited by-同舟云学术

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Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics

Published:2008-04-25 Issue:4 Volume:47 Page:2349-2353
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kita Koji,Suzuki Sho,Nomura Hideyuki,Takahashi Toshitake,Nishimura Tomonori,Toriumi Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

2. The Equilibrium Ge(s) + GeO2(s) = 2GeO(g). The Heat of Formation of Germanic Oxide

3. Rates of Oxidation of Germanium

4. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

5. Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

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4. Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics;Materials Science in Semiconductor Processing;2023-08

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