New Heteroleptic Germanium Precursors for GeO<sub>2</sub> Thin Films by Atomic Layer Deposition-Reference-Cited by-同舟云学术

New Heteroleptic Germanium Precursors for GeO₂ Thin Films by Atomic Layer Deposition

Published:2023-11-09 Issue:46 Volume:8 Page:43759-43770
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Choi Heenang¹²,Park Chanwoo¹,Lee Sung Kwang¹,Ryu Ji Yeon¹^ORCID,Son Seung Uk²^ORCID,Eom Taeyong¹^ORCID,Chung Taek-Mo¹³^ORCID

Affiliation:

1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea

2. Department of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea

3. Department of Chemical Convergence Materials, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

Korea Research Institute of Chemical Technology

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c05657

Reference70 articles.

1. Spectroscopic insights into CO sensing of undoped and palladium doped tin dioxide sensors derived from hydrothermally treated tin oxide sol

2. Mesoporous tin oxide: An efficient catalyst with versatile applications in acid and oxidation catalysis

3. An enhanced gas sensor based on SiO2@mesoporous MCM-41 core–shell nanocomposites for SO2 visual detection

4. Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment

5. A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Volatile Antimony(III) Precursors for Metal Oxide Thin Film Deposition;ACS Omega;2024-07-15