Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2789701
Reference20 articles.
1. Growth mechanism difference of sputtered HfO2 on Ge and on Si
2. Fermi-level pinning and charge neutrality level in germanium
3. Extended Abstract of 2006 International Conference on Solid State Devices and Materials (SSDM);Nishimura T.,2006
4. Metal-germanium Schottky barriers
5. Electronic Properties of Semiconductor Interfaces
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