Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126309
Reference16 articles.
1. Chemical and electronic structure of the SiO2/Si interface
2. Chemically prepared oxides on Si(001): an XPS study
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4. Bonding partner change reaction in oxidation of Ge on Si(001): Observation of two step formation of SiO2
5. A VUV beamline (ABL-3B) for real-time photoelectron spectroscopy at the NTT synchrotron radiation facility
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