Effect of SiO2 capping on the solid-phase-crystallized Ge thin films
Author:
Funder
National Research Foundation of Korea
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
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4. Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells;Tsao;Sol. Energy Mater. Sol. Cells,2011
5. Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization;Jung;J. Alloys Compd.,2013
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substrate-dependent carrier mobility in polycrystalline Ge thin films;Materials Today Communications;2024-08
2. Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films;Electronic Materials Letters;2024-06-24
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