Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration-Reference-Cited by-同舟云学术

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Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration

Published:2019-11-01 Issue:6 Volume:39 Page:8-15
ISSN:0272-1732
Container-title:IEEE Micro
language:
Short-container-title:IEEE Micro

Author:

Datta Suman^ORCID,Dutta Sourav,Grisafe Benjamin^ORCID,Smith Jeff,Srinivasa Srivatsa,Ye Huacheng

Funder

ASCENT

CRISP

Joint University Microelectronics Program

DARPA

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/40/8894154/08894183.pdf?arnumber=8894183

Cited by 96 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy;Advanced Electronic Materials;2024-09-11

2. Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer;IEEE Transactions on Electron Devices;2024-09

3. Prospects and challenges of electrochemical random-access memory for deep-learning accelerators;Current Opinion in Solid State and Materials Science;2024-09

4. High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs;Science China Information Sciences;2024-08-20

5. Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors;Nanotechnology;2024-08-14

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