Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films
Author:
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s13391-024-00506-y.pdf
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4. Takeuchi, W., Taoka, N., Kurosawa, M., Sakashita, M., Nakatsuka, O., Zaima, S.: High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization. Appl. Phys. Lett. 107, 022103 (2015)
5. Yeh, W., Chen, H., Huang, H., Hsiao, C., Jeng, J.: Superlateral growth of a-Ge film by excimer laser annealing. Appl. Phys. Lett. 93, 094103 (2008)
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1. Substrate-dependent carrier mobility in polycrystalline Ge thin films;Materials Today Communications;2024-08
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