High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization-Reference-Cited by-同舟云学术

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

Published:2015-07-13 Issue:2 Volume:107 Page:022103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takeuchi Wakana¹,Taoka Noriyuki¹,Kurosawa Masashi¹²,Sakashita Mitsuo¹,Nakatsuka Osamu¹,Zaima Shigeaki¹²

Affiliation:

1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926507

Reference26 articles.

1. Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing

2. Impacts of oxygen passivation on poly-crystalline germanium thin film transistor

3. Y. Kamata , M. Koike , E. Kurosawa , M. Kurosawa , and H. Ota , in Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (2014), p. 668.

4. Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

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