Au-Induced Crystallization of Amorphous Ge Thin Films: An Indication of the Existence of a Recrystallization Process During Growth at Deep Subeutectic Temperature-Reference-Cited by-同舟云学术

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Au-Induced Crystallization of Amorphous Ge Thin Films: An Indication of the Existence of a Recrystallization Process During Growth at Deep Subeutectic Temperature

Published:2024 Issue: Volume: Page:
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Author:

Sunthornpan Narin,Kyuno Kentaro

Publisher

Elsevier BV

Reference40 articles.

1. Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics;M Miyao;Jpn. J. Appl. Phys,2017

2. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric;C Chi On;IEEE Electron Device Lett,2002

3. Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors;C H Lee;Appl. Phys. Lett,2013

4. Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of solar cell's structure focusing on series resistance for high-efficiency concentrator photovoltaic systems;K Nishioka;Sol. Energy Mater. Sol. Cells,2006

5. 40% efficient metamorphic GaInP?GaInAs?Ge multijunction solar cells;R R King;Appl. Phys. Lett,2007

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