Superlateral growth of a-Ge film by excimer laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2977965
Reference12 articles.
1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
2. Single-crystal Si films for thin-film transistor devices
3. A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
4. Location control of crystal grains in excimer laser crystallization of silicon thin films
5. Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films
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2. Formation of Metastable Solid Solutions in Bi-Ge Films during Low-Temperature Treatment;Metals;2024-08-08
3. Effect of Deposition Temperature on the Electrical Properties of Solid-Phase Crystallized Ge Thin Films;Electronic Materials Letters;2024-06-24
4. Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure;Crystal Growth & Design;2024-05-02
5. Infinite lateral growth of (001) single crystal strip in Ge film on SiO2 by micro-chevron laser scanning method;Japanese Journal of Applied Physics;2024-01-04
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