Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure-Reference-Cited by-同舟云学术

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Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure

Published:2024-05-02 Issue:15 Volume:24 Page:6142-6147
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Igura Kota¹,Ishiyama Takamitsu¹,Maeda Shintaro¹,Saitoh Noriyuki²,Yoshizawa Noriko³,Suemasu Takashi¹,Toko Kaoru¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

2. Electron Microscope Facility, TIA, AIST, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

3. Global Zero Emission Research Center, AIST, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Association for Chemical Innovation

Japan Society for the Promotion of Science

Japan Science and Technology Corporation

TEPCO Memorial Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00196

Reference49 articles.

1. Fundamentals of Metal-induced Crystallization of Amorphous Semiconductors

2. Metal-induced layer exchange of group IV materials

3. Nickel induced crystallization of amorphous silicon thin films

4. In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films

5. Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

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