Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4705733
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1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
2. Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices*
3. High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping
4. High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
5. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
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