Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1404409
Reference17 articles.
1. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
2. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
3. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
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