Investigation of Temperature Variation in Partially Extended Si1-xGex Source Double Gate Tunnel FET
Author:
Affiliation:
1. National Institute of Technology,Department of Electronics and Communication Engineering,Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9971791/9971808/09972024.pdf?arnumber=9972024
Reference26 articles.
1. Performance investigation of asymmetric double‐gate doping less tunnel FET with Si/Ge heterojunction
2. Vertical P-TFET With a P-Type SiGe Pocket
3. Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF Performance
4. Performance Investigation Of Extended Vertical Double Gate Tunnel Field Effect Transistor
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1. Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET);Journal of Electronic Materials;2024-03-26
2. Simulation and Extraction of Dual-Gate TFET With Ferroelectric Material to Preserve Data;2024 Fourth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2024-01-11
3. Linearity Analysis of Charge Plasma-Induced Graded Channel Nanotube at Varying Temperatures;2023 International Conference on Self Sustainable Artificial Intelligence Systems (ICSSAS);2023-10-18
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