Location control of crystal grains in excimer laser crystallization of silicon thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1591998
Reference28 articles.
1. Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film
2. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors
3. Sequential lateral solidification of thin silicon films on SiO2
4. Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
5. A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
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