Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3006320
Reference18 articles.
1. Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
2. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
3. Dangling-bond defects and hydrogen passivation in germanium
4. Interface traps and dangling-bond defects in (100)Ge∕HfO2
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