HfO2 as gate dielectric on Ge: Interfaces and deposition techniques-Reference-Cited by-同舟云学术

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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Published:2006-12 Issue:3 Volume:135 Page:256-260
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Caymax M.,Van Elshocht S.,Houssa M.,Delabie A.,Conard T.,Meuris M.,Heyns M.M.,Dimoulas A.,Spiga S.,Fanciulli M.,Seo J.W.,Goncharova L.V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

2. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

3. Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

4. Surface oxidation states of germanium

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Memory Window and Robust Endurance for Ge P-Channel Ferroelectric FET Memory Using Microwave Annealing Followed by Rapid Thermal Annealing;IEEE Electron Device Letters;2022-12

2. Influence of high energy ion irradiation on structural, morphological and optical properties of high-k dielectric hafnium oxide (HfO2) thin films grown by atomic layer deposition;Journal of Alloys and Compounds;2020-08

3. Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram;Semiconductors;2020-05

4. Progress Towards Passivation of High-Mobility Channels;ECS Transactions;2019-12-17

5. Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer;Materials Research Express;2019-05-24

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