Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer-Reference-Cited by-同舟云学术

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Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer

Published:2019-05-24 Issue:8 Volume:6 Page:086442
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Mallem Kumar^ORCID,Ju Minkyu,Narayana Ashwath,Chodary Sanchari,Kim Jaemin,Park Jinsu,Kim Seyoun,Lokesh S V,Ravi Kumar M V,Kim Youngkuk,Cho Eun-Chel,Yi Junsin^ORCID

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/2053-1591/ab2263/pdf

Reference39 articles.

1. High-k/Ge MOSFETs for future nanoelectronics

2. Considerations for Ultimate CMOS Scaling

3. (Invited) Advanced CMOS Scaling and FinFET Technology

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Development of hafnium based high-k materials—A review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deployment of low-cost green synthesized SnO2 and CuO nanoparticles bi-layer based transistor for H2S detection;Results in Chemistry;2024-01

2. Local Back-Gate Monolayer MoS₂ Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal;2023 Device Research Conference (DRC);2023-06-25

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