Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric-Reference-Cited by-同舟云学术

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Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Published:2004-11 Issue:18 Volume:85 Page:4127-4129
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Nan,Zhang Qingchun,Zhu Chunxiang,Chan D. S. H.,Li M. F.,Balasubramanian N.,Chin Albert,Kwong Dim-Lee

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1812835

Reference11 articles.

1. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

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