Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

Published:2012-01-20 Issue:1 Volume:51 Page:01AG06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Gang Seok,Jeon Hunsoo,Jung Se-Gyo,Bae Seon Min,Shin Min Jung,Kim Kyoung Hwa,Yi Sam Nyung,Yang Min,Ahn Hyung Soo,Yu Young-Moon,Kim Suck-Whan,Ha Hong-Ju,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

2. 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers

3. MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

4. Anomalous luminescence behavior in the InAlGaN thin film

5. Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition

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