340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
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