MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures-Reference-Cited by-同舟云学术

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MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Published:2008-04 Issue:7-9 Volume:310 Page:1777-1780
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Suihkonen S.,Svensk O.,Törmä P.T.,Ali M.,Sopanen M.,Lipsanen H.,Odnoblyudo M.A.,Bougrov V.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. M.E. Aumer, S.F. LeBoeuf, F.G. McIntosh, S.M. Bedair, Appl. Phys. Lett. 75 (1999) 3315.

3. InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers

4. Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

5. A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application;Superlattices and Microstructures;2018-06

2. Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology;Journal of Materials Science: Materials in Electronics;2016-08-10

3. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures;Journal of Applied Physics;2015-01-07

4. Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers;RSC Advances;2015

5. Characterization of nitride-based LED materials and devices using TOF-SIMS;Surface and Interface Analysis;2014-08-07

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