AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method-Reference-Cited by-同舟云学术

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AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

Published:2016-12-12 Issue:1S Volume:56 Page:01AD07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeon Hunsoo,Jeon Injun,Lee Gang Seok,Bae Sung Geun,Ahn Hyung Soo,Yang Min,Yi Sam Nyung,Yu Young Moon,Honda Yoshio,Sawaki Nobuhiko,Kim Suck-Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=1S/a=01AD07/pdf

Reference31 articles.

1. AlGaN ultraviolet photoconductors grown on sapphire

2. High quantum efficiency AlGaN solar-blind p-i-n photodiodes

3. 200nm deep ultraviolet photodetectors based on AlN

4. High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

5. Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport;Materials;2022-12-09

2. Growth of a Thick AlN Epilayer by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method;Journal of the Korean Physical Society;2020-08

3. Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale;Journal of Electronic Materials;2020-02-28

4. Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography;Japanese Journal of Applied Physics;2019-05-20

5. Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy;Japanese Journal of Applied Physics;2017-12-08

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